Diodes Incorporated - 1N4006G-T

KEY Part #: K6452367

1N4006G-T Pricing (USD) [1383862PC Stock]

  • 1 pcs$0.02673
  • 5,000 pcs$0.02428
  • 10,000 pcs$0.02158
  • 25,000 pcs$0.02023
  • 50,000 pcs$0.01794

Nimewo Pati:
1N4006G-T
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
DIODE GEN PURP 800V 1A DO41. Rectifiers 1.0A 800V
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Diodes - RF and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Diodes Incorporated 1N4006G-T electronic components. 1N4006G-T can be shipped within 24 hours after order. If you have any demands for 1N4006G-T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4006G-T Atribi pwodwi yo

Nimewo Pati : 1N4006G-T
Manifakti : Diodes Incorporated
Deskripsyon : DIODE GEN PURP 800V 1A DO41
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 800V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 5µA @ 800V
Kapasite @ Vr, F : 8pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-204AL, DO-41, Axial
Pake Aparèy Founisè : DO-41
Operating Tanperati - Junction : -65°C ~ 175°C

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