Nimewo Pati :
JDH3D01STE85LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
RF DIODE SCHOTTKY 4V SSM
Voltage - Peak Ranvèse (Max) :
4V
Kapasite @ Vr, F :
0.6pF @ 0.2V, 1MHz
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
125°C (TJ)
Pake / Ka :
SC-75, SOT-416
Pake Aparèy Founisè :
SSM