Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 1A DO214BA
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 1A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
2µs
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DO-214BA (GF1)
Operating Tanperati - Junction :
-65°C ~ 175°C