Vishay Semiconductor Diodes Division - UG8BT-E3/45

KEY Part #: K6456724

UG8BT-E3/45 Pricing (USD) [171181PC Stock]

  • 1 pcs$0.21607
  • 1,000 pcs$0.19672

Nimewo Pati:
UG8BT-E3/45
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 8A TO220AC. Rectifiers 100 Volt 8.0A 20ns 150 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division UG8BT-E3/45 electronic components. UG8BT-E3/45 can be shipped within 24 hours after order. If you have any demands for UG8BT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UG8BT-E3/45 Atribi pwodwi yo

Nimewo Pati : UG8BT-E3/45
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 8A TO220AC
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 1V @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 30ns
Kouran - Fèy Reverse @ Vr : 10µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220AC
Operating Tanperati - Junction : -55°C ~ 150°C

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