Taiwan Semiconductor Corporation - MUR360S M6G

KEY Part #: K6457808

MUR360S M6G Pricing (USD) [693520PC Stock]

  • 1 pcs$0.05333

Nimewo Pati:
MUR360S M6G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 600V 3A DO214AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Tiristors - SCR, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation MUR360S M6G electronic components. MUR360S M6G can be shipped within 24 hours after order. If you have any demands for MUR360S M6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MUR360S M6G Atribi pwodwi yo

Nimewo Pati : MUR360S M6G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 600V 3A DO214AB
Seri : -
Estati Pati : Not For New Designs
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AB, SMC
Pake Aparèy Founisè : DO-214AB (SMC)
Operating Tanperati - Junction : -55°C ~ 175°C

Ou ka enterese tou
  • GL41YHE3/97

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1.6KV 1A DO213AB. Rectifiers 1 Amp 1600 Volt 30 Amp IFSM

  • BYM07-400-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Rectifiers 0.5 Amp 400 Volt

  • EGL34B-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Rectifiers 0.5Amp 100 Volt 50ns

  • BYM07-150-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 500MA DO213. Rectifiers 150 Volt 0.5A 50ns Glass Passivated

  • RGL34G-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Diodes - General Purpose, Power, Switching 400 Volt 0.5A 150ns 10 Amp IFSM

  • BYM07-300-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 500MA DO213. Rectifiers 300 Volt 0.5A 50ns Glass Passivated