Vishay Semiconductor Diodes Division - GF1GHE3/67A

KEY Part #: K6452785

GF1GHE3/67A Pricing (USD) [500114PC Stock]

  • 1 pcs$0.07396
  • 6,000 pcs$0.06624

Nimewo Pati:
GF1GHE3/67A
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 400V 1A DO214BA. Rectifiers 400 Volt 1.0 Amp Glass Passivated
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Diodes - Zener - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division GF1GHE3/67A electronic components. GF1GHE3/67A can be shipped within 24 hours after order. If you have any demands for GF1GHE3/67A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GF1GHE3/67A Atribi pwodwi yo

Nimewo Pati : GF1GHE3/67A
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 400V 1A DO214BA
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 5µA @ 400V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214BA
Pake Aparèy Founisè : DO-214BA (GF1)
Operating Tanperati - Junction : -65°C ~ 175°C

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