Nimewo Pati :
BSM75GD120DLCBOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 2 LOW POWER ECONO3-1
Estati Pati :
Not For New Designs
Nou konte genyen :
Full Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
125A
Vce (sou) (Max) @ Vge, Ic :
2.6V @ 15V, 75A
Kouran - Cutoff Pèseptè (Max) :
92µA
Antre kapasite (Cies) @ Vce :
5.1nF @ 25V
Operating Tanperati :
-40°C ~ 125°C
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Module