[14111PC Stock]
- Nimewo Pati:
- HUFA76629D3ST
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 20A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HUFA76629D3ST electronic components. HUFA76629D3ST can be shipped within 24 hours after order. If you have any demands for HUFA76629D3ST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HUFA76629D3ST Atribi pwodwi yo
Nimewo Pati :
HUFA76629D3ST
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 20A DPAK
Seri :
UltraFET™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
52 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
1285pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
110W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252AA
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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