Vishay Semiconductor Diodes Division - BA779-HG3-08

KEY Part #: K6464437

BA779-HG3-08 Pricing (USD) [1129485PC Stock]

  • 1 pcs$0.03456
  • 3,000 pcs$0.03438
  • 6,000 pcs$0.03247
  • 15,000 pcs$0.02961
  • 30,000 pcs$0.02770
  • 75,000 pcs$0.02547

Nimewo Pati:
BA779-HG3-08
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
RF DIODE PIN 30V SOT23-3. PIN Diodes 30V 50mA AUTO
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BA779-HG3-08 electronic components. BA779-HG3-08 can be shipped within 24 hours after order. If you have any demands for BA779-HG3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BA779-HG3-08 Atribi pwodwi yo

Nimewo Pati : BA779-HG3-08
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : RF DIODE PIN 30V SOT23-3
Seri : -
Estati Pati : Active
Kalite dyòd : PIN - Single
Voltage - Peak Ranvèse (Max) : 30V
Kouran - Max : 50mA
Kapasite @ Vr, F : 0.5pF @ 0V, 100MHz
Rezistans @ Si, F : 50 Ohm @ 1.5mA, 100MHz
Disipasyon Pouvwa (Max) : -
Operating Tanperati : 125°C (TJ)
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : SOT-23-3