Toshiba Semiconductor and Storage - RN2310,LF

KEY Part #: K6526362

RN2310,LF Pricing (USD) [2910718PC Stock]

  • 1 pcs$0.01277
  • 3,000 pcs$0.01271

Nimewo Pati:
RN2310,LF
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
TRANS PREBIAS PNP 0.1W USM.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - RF, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage RN2310,LF electronic components. RN2310,LF can be shipped within 24 hours after order. If you have any demands for RN2310,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2310,LF Atribi pwodwi yo

Nimewo Pati : RN2310,LF
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : TRANS PREBIAS PNP 0.1W USM
Seri : -
Estati Pati : Active
Kalite tranzistò : PNP - Pre-Biased
Kouran - Pèseptè (Ic) (Max) : 100mA
Voltage - Pèseptè ki emèt deba (Max) : 50V
Rezistans - Sèvi (R1) : 4.7 kOhms
Rezistans - Sèvi ak emeteur (R2) : -
DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Kouran - Cutoff Pèseptè (Max) : 100nA (ICBO)
Frekans - Tranzisyon : 200MHz
Pouvwa - Max : 100mW
Mounting Kalite : Surface Mount
Pake / Ka : SC-70, SOT-323
Pake Aparèy Founisè : USM

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