Manifakti :
Richtek USA Inc.
Deskripsyon :
IC HI-SIDE MOSFET SWITCH DIP8
Kondwi konte genyen :
High-Side or Low-Side
Kalite Chèn :
Independent
Kalite Gate :
IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou :
13V ~ 20V
Vòltaj lojik - VIL, VIH :
0.8V, 2.5V
Kouran - Peak Sòti (Sous, Lavabo) :
300mA, 600mA
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
600V
Rise / Fall Time (Tip) :
70ns, 35ns
Operating Tanperati :
-40°C ~ 125°C (TA)
Mounting Kalite :
Through Hole
Pake / Ka :
8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè :
8-DIP