Infineon Technologies - IRF8714GTRPBF

KEY Part #: K6420954

IRF8714GTRPBF Pricing (USD) [302549PC Stock]

  • 1 pcs$0.12225
  • 4,000 pcs$0.11733

Nimewo Pati:
IRF8714GTRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 30V 14A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF8714GTRPBF Atribi pwodwi yo

Nimewo Pati : IRF8714GTRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 30V 14A 8-SOIC
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 14A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 8.7 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id : 2.35V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1020pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SO
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)