Comchip Technology - 1N4006T-G

KEY Part #: K6428359

1N4006T-G Pricing (USD) [3371356PC Stock]

  • 1 pcs$0.01157
  • 5,000 pcs$0.01152

Nimewo Pati:
1N4006T-G
Manifakti:
Comchip Technology
Detaye deskripsyon:
DIODE GEN PURP 800V 1A DO41. Rectifiers DIODE GEN PURP 800V 1A DO41
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4006T-G Atribi pwodwi yo

Nimewo Pati : 1N4006T-G
Manifakti : Comchip Technology
Deskripsyon : DIODE GEN PURP 800V 1A DO41
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 800V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 5µA @ 800V
Kapasite @ Vr, F : 15pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-204AL, DO-41, Axial
Pake Aparèy Founisè : DO-41
Operating Tanperati - Junction : -55°C ~ 150°C

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