Infineon Technologies - FP35R12W2T4BOMA1

KEY Part #: K6534610

FP35R12W2T4BOMA1 Pricing (USD) [1838PC Stock]

  • 1 pcs$23.55232

Nimewo Pati:
FP35R12W2T4BOMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT MODULE VCES 1200V 35A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Infineon Technologies FP35R12W2T4BOMA1 electronic components. FP35R12W2T4BOMA1 can be shipped within 24 hours after order. If you have any demands for FP35R12W2T4BOMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FP35R12W2T4BOMA1 Atribi pwodwi yo

Nimewo Pati : FP35R12W2T4BOMA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT MODULE VCES 1200V 35A
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 54A
Pouvwa - Max : 215W
Vce (sou) (Max) @ Vge, Ic : 2.25V @ 15V, 35A
Kouran - Cutoff Pèseptè (Max) : 1mA
Antre kapasite (Cies) @ Vce : 2nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

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