STMicroelectronics - STGB10NB60ST4

KEY Part #: K6423795

[9531PC Stock]


    Nimewo Pati:
    STGB10NB60ST4
    Manifakti:
    STMicroelectronics
    Detaye deskripsyon:
    IGBT 600V 29A 80W D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in STMicroelectronics STGB10NB60ST4 electronic components. STGB10NB60ST4 can be shipped within 24 hours after order. If you have any demands for STGB10NB60ST4, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STGB10NB60ST4 Atribi pwodwi yo

    Nimewo Pati : STGB10NB60ST4
    Manifakti : STMicroelectronics
    Deskripsyon : IGBT 600V 29A 80W D2PAK
    Seri : PowerMESH™
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 29A
    Kouran - Pèseptè batman (Icm) : 80A
    Vce (sou) (Max) @ Vge, Ic : 1.75V @ 15V, 10A
    Pouvwa - Max : 80W
    Oblije chanje enèji : 600µJ (on), 5mJ (off)
    Kalite Antre : Standard
    Gate chaje : 33nC
    Td (on / off) @ 25 ° C : 700ns/1.2µs
    Kondisyon egzamen an : 480V, 10A, 1 kOhm, 15V
    Ranvèse Tan Reverse (trr) : -
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Pake Aparèy Founisè : D²PAK