ON Semiconductor - FQP30N06

KEY Part #: K6411269

FQP30N06 Pricing (USD) [65399PC Stock]

  • 1 pcs$0.56443
  • 10 pcs$0.50088
  • 100 pcs$0.39594
  • 500 pcs$0.29046
  • 1,000 pcs$0.22931

Nimewo Pati:
FQP30N06
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 60V 30A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FQP30N06 electronic components. FQP30N06 can be shipped within 24 hours after order. If you have any demands for FQP30N06, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQP30N06 Atribi pwodwi yo

Nimewo Pati : FQP30N06
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 60V 30A TO-220
Seri : QFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 40 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 945pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 79W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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