NXP USA Inc. - PDTB123YS,126

KEY Part #: K6527776

[2719PC Stock]


    Nimewo Pati:
    PDTB123YS,126
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    TRANS PREBIAS PNP 500MW TO92-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo and Tiristors - TRIACs ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. PDTB123YS,126 electronic components. PDTB123YS,126 can be shipped within 24 hours after order. If you have any demands for PDTB123YS,126, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PDTB123YS,126 Atribi pwodwi yo

    Nimewo Pati : PDTB123YS,126
    Manifakti : NXP USA Inc.
    Deskripsyon : TRANS PREBIAS PNP 500MW TO92-3
    Seri : -
    Estati Pati : Obsolete
    Kalite tranzistò : PNP - Pre-Biased
    Kouran - Pèseptè (Ic) (Max) : 500mA
    Voltage - Pèseptè ki emèt deba (Max) : 50V
    Rezistans - Sèvi (R1) : 2.2 kOhms
    Rezistans - Sèvi ak emeteur (R2) : 10 kOhms
    DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
    Vce saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
    Kouran - Cutoff Pèseptè (Max) : 500nA
    Frekans - Tranzisyon : -
    Pouvwa - Max : 500mW
    Mounting Kalite : Through Hole
    Pake / Ka : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Pake Aparèy Founisè : TO-92-3