Nimewo Pati :
VSIB660-E3/45
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
BRIDGE RECT 1P 600V 2.8A GSIB-5S
Kalite dyòd :
Single Phase
Voltage - Peak Ranvèse (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
2.8A
Voltage - Forward (Vf) (Max) @ Si :
950mV @ 3A
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
4-SIP, GSIB-5S
Pake Aparèy Founisè :
GSIB-5S