Manifakti :
Diodes Incorporated
Deskripsyon :
DIODE GEN PURP 200V 6A R6
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
6A
Voltage - Forward (Vf) (Max) @ Si :
1.2V @ 6A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
60ns
Kouran - Fèy Reverse @ Vr :
10µA @ 200V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
R-6
Operating Tanperati - Junction :
-65°C ~ 150°C