BYG22BHE3_A/H Pricing (USD) [477636PC Stock]
- 1 pcs$0.07744
- 3,600 pcs$0.07081
- Nimewo Pati:
- BYG22BHE3_A/H
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE AVALANCHE 100V 2A DO214AC. Rectifiers 2.0A,100V,25NS, AVAL AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BYG22BHE3_A/H electronic components. BYG22BHE3_A/H can be shipped within 24 hours after order. If you have any demands for BYG22BHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYG22BHE3_A/H Atribi pwodwi yo
Nimewo Pati :
BYG22BHE3_A/H
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE AVALANCHE 100V 2A DO214AC
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Avalanche
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
2A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 2A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
25ns
Kouran - Fèy Reverse @ Vr :
1µA @ 100V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AC, SMA
Pake Aparèy Founisè :
DO-214AC (SMA)
Operating Tanperati - Junction :
-55°C ~ 150°C
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