Vishay Semiconductor Diodes Division - BAW27-TAP

KEY Part #: K6455271

BAW27-TAP Pricing (USD) [3340050PC Stock]

  • 1 pcs$0.01107
  • 50,000 pcs$0.00930

Nimewo Pati:
BAW27-TAP
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 60V 600MA DO35. Diodes - General Purpose, Power, Switching 75 Volt 200mA 4.0 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAW27-TAP electronic components. BAW27-TAP can be shipped within 24 hours after order. If you have any demands for BAW27-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAW27-TAP Atribi pwodwi yo

Nimewo Pati : BAW27-TAP
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 60V 600MA DO35
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 60V
Kouran - Mwayèn Rèktifye (Io) : 600mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 400mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 6ns
Kouran - Fèy Reverse @ Vr : 100nA @ 60V
Kapasite @ Vr, F : 4pF @ 0V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-204AH, DO-35, Axial
Pake Aparèy Founisè : DO-35
Operating Tanperati - Junction : 175°C (Max)

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