Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 100V 6A D5B
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
6A
Voltage - Forward (Vf) (Max) @ Si :
1.76V @ 18.8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
30ns
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-5B
Operating Tanperati - Junction :
-65°C ~ 155°C