ON Semiconductor - EGP10F

KEY Part #: K6455538

EGP10F Pricing (USD) [1249952PC Stock]

  • 1 pcs$0.03588
  • 25,000 pcs$0.03571

Nimewo Pati:
EGP10F
Manifakti:
ON Semiconductor
Detaye deskripsyon:
DIODE GEN PURP 300V 1A DO41. Rectifiers 1A Rectifier UF Recovery
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor EGP10F electronic components. EGP10F can be shipped within 24 hours after order. If you have any demands for EGP10F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGP10F Atribi pwodwi yo

Nimewo Pati : EGP10F
Manifakti : ON Semiconductor
Deskripsyon : DIODE GEN PURP 300V 1A DO41
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 300V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 5µA @ 300V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : DO-204AL, DO-41, Axial
Pake Aparèy Founisè : DO-41
Operating Tanperati - Junction : -65°C ~ 150°C

Ou ka enterese tou
  • C3D04060E

    Cree/Wolfspeed

    DIODE SCHOTTKY 600V 4A TO252-2. Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 4A

  • CSD01060E-TR

    Cree/Wolfspeed

    DIODE SCHOTTKY 600V 1A TO252-2. Schottky Diodes & Rectifiers SiC Schottky Diode 1A, 600V

  • C4D10120E

    Cree/Wolfspeed

    DIODE SCHOTTKY 1.2KV 10A TO252-2. Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 10A

  • BAS21E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching AF DIODE 250V 0.25A

  • BAT64E6327HTSA1

    Infineon Technologies

    DIODE SCHOTTKY 40V 120MA SOT23-3. Schottky Diodes & Rectifiers 40V 0.12A

  • MMBD1201

    ON Semiconductor

    DIODE GEN PURP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching High Conductance Ultra Fast