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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Sikwi entegre Integrated (IC)
  4. Memwa
  5. TC58BYG1S3HBAI4

Toshiba Memory America, Inc. - TC58BYG1S3HBAI4

KEY Part #: K938204

TC58BYG1S3HBAI4 Pricing (USD) [19544PC Stock]

  • 1 pcs$2.34452
Nimewo Pati:
TC58BYG1S3HBAI4
Manifakti:
Toshiba Memory America, Inc.
Detaye deskripsyon:
2GB SLC NAND BGA 24NM I TEMP EE. NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM)
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Lineyè - Anplifikatè - Objektif Espesyal, PMIC - regilatè Voltage - DC DC oblije chanje regu, Lojik - Rejis chanjman, PMIC - Lighting, Ballast regulateur, Entèfas - Terminators siyal, PMIC - Jesyon tèmik, Entèfas - switch analog - Espesyal Objektif and Done akizisyon - potansyomè dijital ...
Avantaj konpetitif:
We specialize in Toshiba Memory America, Inc. TC58BYG1S3HBAI4 electronic components. TC58BYG1S3HBAI4 can be shipped within 24 hours after order. If you have any demands for TC58BYG1S3HBAI4, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TC58BYG1S3HBAI4 Atribi pwodwi yo

Nimewo Pati : TC58BYG1S3HBAI4
Manifakti : Toshiba Memory America, Inc.
Deskripsyon : 2GB SLC NAND BGA 24NM I TEMP EE
Seri : Benand™
Estati Pati : Active
Kalite memwa yo : Non-Volatile
Fòma memwa : FLASH
Teknoloji : FLASH - NAND (SLC)
Size memwa : 2Gb (256M x 8)
Frè frekans lan : -
Ekri Sik Tan - Pawòl, Page : 25ns
Tan aksè : -
Entèfas memwa : -
Voltage - Pwovizyon pou : 1.7V ~ 1.95V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 63-VFBGA
Pake Aparèy Founisè : 63-TFBGA (9x11)

Dènye nouvèl

Toshiba Memory THGAF Managed NAND Flash Memories
Toshiba Memory THGAM e-MMC™ NAND Flash Memory
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