Nimewo Pati :
NDD60N900U1-1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 600V 5.9A IPAK-4
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
900 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
360pF @ 50V
Disipasyon Pouvwa (Max) :
74W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I-PAK
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA