Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 175V 100MA DO213
Voltage - DC Ranvèse (Vr) (Max) :
175V
Kouran - Mwayèn Rèktifye (Io) :
100mA
Voltage - Forward (Vf) (Max) @ Si :
1V @ 100mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
100nA @ 175V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DO-213AA
Operating Tanperati - Junction :
-65°C ~ 175°C