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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FCP110N65F

ON Semiconductor - FCP110N65F

KEY Part #: K6397450

FCP110N65F Pricing (USD) [17545PC Stock]

  • 1 pcs$2.34893
  • 800 pcs$1.67973
Nimewo Pati:
FCP110N65F
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 650V 35A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor FCP110N65F electronic components. FCP110N65F can be shipped within 24 hours after order. If you have any demands for FCP110N65F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCP110N65F Atribi pwodwi yo

Nimewo Pati : FCP110N65F
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 650V 35A TO220
Seri : FRFET®, SuperFET® II
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 110 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 3.5mA
Chaje Gate (Qg) (Max) @ Vgs : 145nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4895pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 357W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3

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