Manifakti :
Texas Instruments
Deskripsyon :
IC COMP SW FET DRVR 8-SOIC
Kondwi konte genyen :
Low-Side
Kalite Chèn :
Synchronous
Kalite Gate :
N-Channel, P-Channel MOSFET
Voltage - Pwovizyon pou :
7V ~ 20V
Vòltaj lojik - VIL, VIH :
0.8V, 2V
Kouran - Peak Sòti (Sous, Lavabo) :
500mA, 1A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
-
Rise / Fall Time (Tip) :
30ns, 25ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC