Vishay Semiconductor Diodes Division - BU25H08-M3/A

KEY Part #: K6540031

BU25H08-M3/A Pricing (USD) [57380PC Stock]

  • 1 pcs$0.68143

Nimewo Pati:
BU25H08-M3/A
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
BRIDGE RECT 1P 800V 3.5A BU.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BU25H08-M3/A electronic components. BU25H08-M3/A can be shipped within 24 hours after order. If you have any demands for BU25H08-M3/A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BU25H08-M3/A Atribi pwodwi yo

Nimewo Pati : BU25H08-M3/A
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : BRIDGE RECT 1P 800V 3.5A BU
Seri : isoCink+™
Estati Pati : Active
Kalite dyòd : Single Phase
Teknoloji : Standard
Voltage - Peak Ranvèse (Max) : 800V
Kouran - Mwayèn Rèktifye (Io) : 3.5A
Voltage - Forward (Vf) (Max) @ Si : 1.05V @ 12.5A
Kouran - Fèy Reverse @ Vr : 5µA @ 800V
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 4-SIP, BU
Pake Aparèy Founisè : isoCINK+™ BU

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