ON Semiconductor - NGTB30N120IHRWG

KEY Part #: K6422561

NGTB30N120IHRWG Pricing (USD) [18778PC Stock]

  • 1 pcs$2.19469
  • 180 pcs$1.61517

Nimewo Pati:
NGTB30N120IHRWG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 1200V 60A 384W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Modil pouvwa chofè, Transistors - JFETs, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in ON Semiconductor NGTB30N120IHRWG electronic components. NGTB30N120IHRWG can be shipped within 24 hours after order. If you have any demands for NGTB30N120IHRWG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTB30N120IHRWG Atribi pwodwi yo

Nimewo Pati : NGTB30N120IHRWG
Manifakti : ON Semiconductor
Deskripsyon : IGBT 1200V 60A 384W TO247
Seri : -
Estati Pati : Last Time Buy
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 60A
Kouran - Pèseptè batman (Icm) : 120A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 30A
Pouvwa - Max : 384W
Oblije chanje enèji : 700µJ (off)
Kalite Antre : Standard
Gate chaje : 225nC
Td (on / off) @ 25 ° C : -/230ns
Kondisyon egzamen an : 600V, 30A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247