Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 800V 4A DO214AB
Voltage - DC Ranvèse (Vr) (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
4A
Voltage - Forward (Vf) (Max) @ Si :
-
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
1.5µs
Kouran - Fèy Reverse @ Vr :
100µA @ 800V
Kapasite @ Vr, F :
60pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AB, SMC
Pake Aparèy Founisè :
DO-214AB (SMC)
Operating Tanperati - Junction :
-55°C ~ 150°C