Vishay Semiconductor Diodes Division - BAV19W-G3-18

KEY Part #: K6440010

BAV19W-G3-18 Pricing (USD) [2423462PC Stock]

  • 1 pcs$0.01611
  • 10,000 pcs$0.01603

Nimewo Pati:
BAV19W-G3-18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 250MA SOD123. Diodes - General Purpose, Power, Switching 120 Volt 200mA 50ns 1A IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Modil pouvwa chofè and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAV19W-G3-18 electronic components. BAV19W-G3-18 can be shipped within 24 hours after order. If you have any demands for BAV19W-G3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV19W-G3-18 Atribi pwodwi yo

Nimewo Pati : BAV19W-G3-18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 250MA SOD123
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 250mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 200mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 100nA @ 100V
Kapasite @ Vr, F : 1.5pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123
Operating Tanperati - Junction : 150°C (Max)

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