Vishay Semiconductor Diodes Division - ES3DHE3_A/I

KEY Part #: K6450491

ES3DHE3_A/I Pricing (USD) [300905PC Stock]

  • 1 pcs$0.12292
  • 3,500 pcs$0.11140

Nimewo Pati:
ES3DHE3_A/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 3A DO214AB. Rectifiers 200 Volt 3.0A 20ns Glass Passivated
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division ES3DHE3_A/I electronic components. ES3DHE3_A/I can be shipped within 24 hours after order. If you have any demands for ES3DHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3DHE3_A/I Atribi pwodwi yo

Nimewo Pati : ES3DHE3_A/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 3A DO214AB
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 900mV @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 30ns
Kouran - Fèy Reverse @ Vr : 10µA @ 200V
Kapasite @ Vr, F : 45pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AB, SMC
Pake Aparèy Founisè : DO-214AB (SMC)
Operating Tanperati - Junction : -55°C ~ 150°C

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