Vishay Semiconductor Diodes Division - VS-6ESH02HM3/87A

KEY Part #: K6431704

VS-6ESH02HM3/87A Pricing (USD) [325064PC Stock]

  • 1 pcs$0.11579
  • 6,500 pcs$0.11521

Nimewo Pati:
VS-6ESH02HM3/87A
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 6A TO277A. Rectifiers Hypfst Rct 6A 200V AEC-Q101
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-6ESH02HM3/87A electronic components. VS-6ESH02HM3/87A can be shipped within 24 hours after order. If you have any demands for VS-6ESH02HM3/87A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-6ESH02HM3/87A Atribi pwodwi yo

Nimewo Pati : VS-6ESH02HM3/87A
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 6A TO277A
Seri : Automotive, AEC-Q101, FRED Pt®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 6A
Voltage - Forward (Vf) (Max) @ Si : 940mV @ 6A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 22ns
Kouran - Fèy Reverse @ Vr : 2µA @ 200V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-277, 3-PowerDFN
Pake Aparèy Founisè : TO-277A (SMPC)
Operating Tanperati - Junction : -65°C ~ 175°C

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