UGB8BTHE3/81 Pricing (USD) [112580PC Stock]
- 1 pcs$0.32854
- 800 pcs$0.30772
- Nimewo Pati:
- UGB8BTHE3/81
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 8A TO263AB. Rectifiers 100 Volt 8.0A 20ns 150 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division UGB8BTHE3/81 electronic components. UGB8BTHE3/81 can be shipped within 24 hours after order. If you have any demands for UGB8BTHE3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UGB8BTHE3/81 Atribi pwodwi yo
Nimewo Pati :
UGB8BTHE3/81
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 8A TO263AB
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
1V @ 8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
30ns
Kouran - Fèy Reverse @ Vr :
10µA @ 100V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
Operating Tanperati - Junction :
-55°C ~ 150°C
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