SS1H9HE3_B/I Pricing (USD) [729723PC Stock]
- 1 pcs$0.05069
- Nimewo Pati:
- SS1H9HE3_B/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE SCHOTTKY 90V 1A SMA. Schottky Diodes & Rectifiers 1A 90V H. Barrier Sky Rect.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Modil pouvwa chofè, Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division SS1H9HE3_B/I electronic components. SS1H9HE3_B/I can be shipped within 24 hours after order. If you have any demands for SS1H9HE3_B/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SS1H9HE3_B/I Atribi pwodwi yo
Nimewo Pati :
SS1H9HE3_B/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE SCHOTTKY 90V 1A SMA
Seri :
Automotive, AEC-Q100
Estati Pati :
Active
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
90V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
860mV @ 2A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
1µA @ 90V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AC, SMA
Pake Aparèy Founisè :
SMA (DO-214AC)
Operating Tanperati - Junction :
175°C (Max)
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