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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Diodes - Rèkteur - Single
  5. JAN1N6641US

Microsemi Corporation - JAN1N6641US

KEY Part #: K6426980

JAN1N6641US Pricing (USD) [7875PC Stock]

  • 1 pcs$5.25926
  • 100 pcs$5.23309
Nimewo Pati:
JAN1N6641US
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE GEN PURP 50V 300MA B-MELF. Diodes - General Purpose, Power, Switching Switching Diode
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Microsemi Corporation JAN1N6641US electronic components. JAN1N6641US can be shipped within 24 hours after order. If you have any demands for JAN1N6641US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N6641US Atribi pwodwi yo

Nimewo Pati : JAN1N6641US
Manifakti : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 50V 300MA B-MELF
Seri : Military, MIL-PRF-19500/609
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 50V
Kouran - Mwayèn Rèktifye (Io) : 300mA
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 300mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 5ns
Kouran - Fèy Reverse @ Vr : 100nA @ 50V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : SQ-MELF, B
Pake Aparèy Founisè : D-5B
Operating Tanperati - Junction : -65°C ~ 175°C

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