Vishay Semiconductor Diodes Division - BAV20WS-HE3-08

KEY Part #: K6455019

BAV20WS-HE3-08 Pricing (USD) [1600297PC Stock]

  • 1 pcs$0.02311
  • 15,000 pcs$0.01631

Nimewo Pati:
BAV20WS-HE3-08
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 150V 250MA SOD323. Diodes - General Purpose, Power, Switching 200V 625mA 1A IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - Objektif espesyal, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAV20WS-HE3-08 electronic components. BAV20WS-HE3-08 can be shipped within 24 hours after order. If you have any demands for BAV20WS-HE3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV20WS-HE3-08 Atribi pwodwi yo

Nimewo Pati : BAV20WS-HE3-08
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 150V 250MA SOD323
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 150V
Kouran - Mwayèn Rèktifye (Io) : 250mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 200mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 100nA @ 150V
Kapasite @ Vr, F : 1.5pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SC-76, SOD-323
Pake Aparèy Founisè : SOD-323
Operating Tanperati - Junction : 150°C (Max)

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