Infineon Technologies - FP25R12KT3BOSA1

KEY Part #: K6534561

FP25R12KT3BOSA1 Pricing (USD) [1351PC Stock]

  • 1 pcs$32.04785

Nimewo Pati:
FP25R12KT3BOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT MODULE VCES 1200V 40A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies FP25R12KT3BOSA1 electronic components. FP25R12KT3BOSA1 can be shipped within 24 hours after order. If you have any demands for FP25R12KT3BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FP25R12KT3BOSA1 Atribi pwodwi yo

Nimewo Pati : FP25R12KT3BOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT MODULE VCES 1200V 40A
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 40A
Pouvwa - Max : 155W
Vce (sou) (Max) @ Vge, Ic : 2.15V @ 15V, 25A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 1.8nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 125°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module