Infineon Technologies - 65DN06ELEMPRXPSA1

KEY Part #: K6428704

65DN06ELEMPRXPSA1 Pricing (USD) [197PC Stock]

  • 1 pcs$233.95746

Nimewo Pati:
65DN06ELEMPRXPSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
DIODE GEN PURP 600V 8470A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Diodes - Zener - Single, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

65DN06ELEMPRXPSA1 Atribi pwodwi yo

Nimewo Pati : 65DN06ELEMPRXPSA1
Manifakti : Infineon Technologies
Deskripsyon : DIODE GEN PURP 600V 8470A
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 8470A
Voltage - Forward (Vf) (Max) @ Si : 980mV @ 10000A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 100mA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Chassis Mount
Pake / Ka : DO-200AB, B-PUK
Pake Aparèy Founisè : -
Operating Tanperati - Junction : -40°C ~ 180°C

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