ES1BHE3_A/I Pricing (USD) [808309PC Stock]
- 1 pcs$0.04576
- Nimewo Pati:
- ES1BHE3_A/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1.0 Amp 100 Volt 30 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division ES1BHE3_A/I electronic components. ES1BHE3_A/I can be shipped within 24 hours after order. If you have any demands for ES1BHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES1BHE3_A/I Atribi pwodwi yo
Nimewo Pati :
ES1BHE3_A/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 1A DO214AC
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
920mV @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
25ns
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Kapasite @ Vr, F :
10pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AC, SMA
Pake Aparèy Founisè :
DO-214AC (SMA)
Operating Tanperati - Junction :
-55°C ~ 150°C
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