Vishay Semiconductor Diodes Division - GBU8B-E3/45

KEY Part #: K6540121

GBU8B-E3/45 Pricing (USD) [51104PC Stock]

  • 1 pcs$0.76512
  • 800 pcs$0.40242

Nimewo Pati:
GBU8B-E3/45
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
BRIDGE RECT 1PHASE 100V 3.9A GBU. Bridge Rectifiers 100 Volt 8.0 Amp Glass Passivated
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Tiristors - SCR - Modil yo and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division GBU8B-E3/45 electronic components. GBU8B-E3/45 can be shipped within 24 hours after order. If you have any demands for GBU8B-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GBU8B-E3/45 Atribi pwodwi yo

Nimewo Pati : GBU8B-E3/45
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : BRIDGE RECT 1PHASE 100V 3.9A GBU
Seri : -
Estati Pati : Active
Kalite dyòd : Single Phase
Teknoloji : Standard
Voltage - Peak Ranvèse (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 3.9A
Voltage - Forward (Vf) (Max) @ Si : 1V @ 8A
Kouran - Fèy Reverse @ Vr : 5µA @ 100V
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 4-SIP, GBU
Pake Aparèy Founisè : GBU

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