Nexperia USA Inc. - BAS16,215

KEY Part #: K6457856

BAS16,215 Pricing (USD) [3839138PC Stock]

  • 1 pcs$0.00963
  • 3,000 pcs$0.00921
  • 6,000 pcs$0.00831
  • 15,000 pcs$0.00723
  • 30,000 pcs$0.00650
  • 75,000 pcs$0.00578
  • 150,000 pcs$0.00482

Nimewo Pati:
BAS16,215
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
DIODE GEN PURP 100V 215MA SOT23. Diodes - General Purpose, Power, Switching SW 75V 215MA HS
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. BAS16,215 electronic components. BAS16,215 can be shipped within 24 hours after order. If you have any demands for BAS16,215, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS16,215 Atribi pwodwi yo

Nimewo Pati : BAS16,215
Manifakti : Nexperia USA Inc.
Deskripsyon : DIODE GEN PURP 100V 215MA SOT23
Seri : Automotive, AEC-Q101, BAS16
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 215mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 150mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 4ns
Kouran - Fèy Reverse @ Vr : 500nA @ 80V
Kapasite @ Vr, F : 1.5pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : TO-236AB
Operating Tanperati - Junction : 150°C (Max)

Ou ka enterese tou
  • RGL34G-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Diodes - General Purpose, Power, Switching 400 Volt 0.5A 150ns 10 Amp IFSM

  • BYM07-300-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 500MA DO213. Rectifiers 300 Volt 0.5A 50ns Glass Passivated

  • BYM07-50-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 50 Volt 0.5A 50ns Glass Passivated

  • EGL34C-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 500MA DO213. Rectifiers 0.5Amp 150 Volt 50ns

  • EGL34F-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 500MA DO213. Rectifiers 0.5Amp 300 Volt 50ns

  • EGL34A-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 0.5 Amp 50 Volt 50ns