Manifakti :
Infineon Technologies
Deskripsyon :
IC GATE DRVR HI/LOW SIDE 10DFN
Kondwi konte genyen :
Half-Bridge
Kalite Chèn :
Synchronous
Kalite Gate :
N-Channel MOSFET
Voltage - Pwovizyon pou :
4.5V ~ 5.5V
Vòltaj lojik - VIL, VIH :
0.8V, 1V
Kouran - Peak Sòti (Sous, Lavabo) :
2A, 2A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
35V
Rise / Fall Time (Tip) :
10ns, 8ns
Operating Tanperati :
-40°C ~ 125°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
10-VFDFN Exposed Pad
Pake Aparèy Founisè :
10-DFN (3x3)