STGWA80H65DFB Pricing (USD) [11588PC Stock]
- 1 pcs$3.55645
- 600 pcs$2.15172
- Nimewo Pati:
- STGWA80H65DFB
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT BIPO 650V 80A TO247-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGWA80H65DFB electronic components. STGWA80H65DFB can be shipped within 24 hours after order. If you have any demands for STGWA80H65DFB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGWA80H65DFB Atribi pwodwi yo
Nimewo Pati :
STGWA80H65DFB
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT BIPO 650V 80A TO247-3
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
120A
Kouran - Pèseptè batman (Icm) :
240A
Vce (sou) (Max) @ Vge, Ic :
2V @ 15V, 80A
Pouvwa - Max :
469W
Oblije chanje enèji :
2.1mJ (on), 1.5mJ (off)
Kalite Antre :
Standard
Gate chaje :
414nC
Td (on / off) @ 25 ° C :
84ns/280ns
Kondisyon egzamen an :
400V, 80A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
85ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247 Long Leads
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