Vishay Semiconductor Diodes Division - BYV26EGP-E3/73

KEY Part #: K6440414

BYV26EGP-E3/73 Pricing (USD) [674951PC Stock]

  • 1 pcs$0.05480
  • 2,000 pcs$0.05050
  • 6,000 pcs$0.04744
  • 10,000 pcs$0.04438

Nimewo Pati:
BYV26EGP-E3/73
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 1000V 1A DO204AC. Rectifiers 1000 Volt 1.0A 75ns Glass Passivated
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYV26EGP-E3/73 electronic components. BYV26EGP-E3/73 can be shipped within 24 hours after order. If you have any demands for BYV26EGP-E3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYV26EGP-E3/73 Atribi pwodwi yo

Nimewo Pati : BYV26EGP-E3/73
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 1000V 1A DO204AC
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 2.5V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 75ns
Kouran - Fèy Reverse @ Vr : 5µA @ 1000V
Kapasite @ Vr, F : 15pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-204AC, DO-15, Axial
Pake Aparèy Founisè : DO-204AC (DO-15)
Operating Tanperati - Junction : -65°C ~ 175°C

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