Vishay Semiconductor Diodes Division - VS-GT300FD060N

KEY Part #: K6533647

VS-GT300FD060N Pricing (USD) [163PC Stock]

  • 1 pcs$282.88070
  • 12 pcs$260.65420

Nimewo Pati:
VS-GT300FD060N
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
IGBT 600V 379A 1250W DIAP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - IGBTs - Modil yo, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo, Diodes - Zener - Single and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-GT300FD060N electronic components. VS-GT300FD060N can be shipped within 24 hours after order. If you have any demands for VS-GT300FD060N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GT300FD060N Atribi pwodwi yo

Nimewo Pati : VS-GT300FD060N
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : IGBT 600V 379A 1250W DIAP
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Three Level Inverter
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 379A
Pouvwa - Max : 1250W
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 300A
Kouran - Cutoff Pèseptè (Max) : 250µA
Antre kapasite (Cies) @ Vce : 23.3nF @ 30V
Antre : Standard
NTC thermistor : No
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Dual INT-A-PAK (4 + 8)
Pake Aparèy Founisè : Dual INT-A-PAK

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