RJK1003DPN-E0#T2 Pricing (USD) [66402PC Stock]
- 1 pcs$1.36617
- Nimewo Pati:
- RJK1003DPN-E0#T2
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 100V 50A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Tiristors - SCR - Modil yo, Transistors - JFETs, Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America RJK1003DPN-E0#T2 electronic components. RJK1003DPN-E0#T2 can be shipped within 24 hours after order. If you have any demands for RJK1003DPN-E0#T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK1003DPN-E0#T2 Atribi pwodwi yo
Nimewo Pati :
RJK1003DPN-E0#T2
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 100V 50A TO220
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
11 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4150pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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