Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE SCHOTTKY 40V 3A B-MELF
Voltage - DC Ranvèse (Vr) (Max) :
40V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
500mV @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
100µA @ 40V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
B, SQ-MELF
Operating Tanperati - Junction :
-65°C ~ 125°C