Microsemi Corporation - 1N5822US

KEY Part #: K6441014

1N5822US Pricing (USD) [1083PC Stock]

  • 1 pcs$58.38122
  • 10 pcs$54.73028
  • 25 pcs$52.17617

Nimewo Pati:
1N5822US
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE SCHOTTKY 40V 3A B-MELF. Schottky Diodes & Rectifiers Schottky
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Microsemi Corporation 1N5822US electronic components. 1N5822US can be shipped within 24 hours after order. If you have any demands for 1N5822US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5822US Atribi pwodwi yo

Nimewo Pati : 1N5822US
Manifakti : Microsemi Corporation
Deskripsyon : DIODE SCHOTTKY 40V 3A B-MELF
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 40V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 500mV @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 100µA @ 40V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : SQ-MELF, B
Pake Aparèy Founisè : B, SQ-MELF
Operating Tanperati - Junction : -65°C ~ 125°C

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