[5387PC Stock]
- Nimewo Pati:
- HIP2101EIBT
- Manifakti:
- Renesas Electronics America Inc.
- Detaye deskripsyon:
- IC DRVR HALF BRDG 100V 8EP-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Entèfas - switch analog - Espesyal Objektif, Entèfas - Contrôleur, Memwa - regulateur, Embedded - Microcontroleurs, Lineyè - multiplikatè analog, divizeur, Lojik - Flip Flops, Lojik - Espesyal lojik and PMIC - regilatè Voltage - DC DC oblije chanje regu ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America Inc. HIP2101EIBT electronic components. HIP2101EIBT can be shipped within 24 hours after order. If you have any demands for HIP2101EIBT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HIP2101EIBT Atribi pwodwi yo
Nimewo Pati :
HIP2101EIBT
Manifakti :
Renesas Electronics America Inc.
Deskripsyon :
IC DRVR HALF BRDG 100V 8EP-SOIC
Seri :
-
Estati Pati :
Obsolete
Kondwi konte genyen :
Half-Bridge
Kalite Chèn :
Independent
Kantite Chofè yo :
2
Kalite Gate :
N-Channel MOSFET
Voltage - Pwovizyon pou :
9V ~ 14V
Vòltaj lojik - VIL, VIH :
0.8V, 2.2V
Kouran - Peak Sòti (Sous, Lavabo) :
2A, 2A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
114V
Rise / Fall Time (Tip) :
10ns, 10ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Pake Aparèy Founisè :
8-SOIC-EP
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